Datasheet > BL016N10TH-TL

BL016N10TH-TL

更新时间： 2024-04-09 19:00:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	789K
描述
300A, 100V, 300W, N Channel, Power MOSFETs

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数据手册

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BL016N10TH-TL 数据手册

N-Channel Enhancement Mode MOSFET

BL016N10TH-TL

Features



Ultra-low on-resistance and gate-charge

Advanced shielded-gate technology

JESD22-A114-B ESD rating of class 3A per human body model

Mechanical Data



Case: TOLL

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TOLL

Ordering Information

Part Number

Package

TOLL

Shipping Quantity

Marking Code

016N10TH

BL016N10TH-TL

2000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

300

210

I_D

I_DM

E_AS

P_D

1200

3500

300

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.4

0.5

°C /W

MTM1223A: June 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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