Datasheet > BL018N04TH-5DL8

BL018N04TH-5DL8

更新时间： 2024-09-26 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	743K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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BL018N04TH-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL018N04TH-5DL8

Features



Super low R_DS(on) and gate charge

Advanced shielded-gate technology

Green device available

Excellent c_dV/ d_teffect decline

HBM: JESD22-A114-B: 1B

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

018N04TH

BL018N04TH-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p=10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

200

126

I_D

I_DM

800

E_AS

500

°C

114

P_D

Power Dissipation (T_A= 25°C) ^*1

3.1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.1

°C /W

MTM1382A: October 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

中文翻译

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