Datasheet > BGS8H2

BGS8H2

更新时间： 2024-03-03 10:09:35

品牌	Logo	应用领域
恩智浦 - NXP		LTE
页数	文件大小	规格书
15页	208K
描述
SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE

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BGS8H2 数据手册

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

Rev. 4 — 20 August 2018

Product data sheet

1 General description

The BGS8H2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver

applications, available in a small plastic 6-pin extremely thin leadless package. The

BGS8H2 requires one external matching inductor.

The BGS8H2 delivers system-optimized gain for both primary and diversity applications

where sensitivity improvement is required. The high linearity of these low noise devices

ensures the required receive sensitivity independent of cellular transmit power level in

FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient,

the BGS8H2 can be switched off to operate in bypass mode at a 1 µA current, to lower

power consumption.

The BGS8H2 is optimized for 2300 MHz to 2690 MHz.

2 Features and benefits

• Operating frequency from 2300 MHz to 2690 MHz

• Noise figure = 1.0 dB

• Gain 12.5 dB

• Bypass switch insertion loss of 2.3 dB

• High input 1 dB compression point of -1.5 dBm

• High in band IP3_iof 4.0 dBm

• Supply voltage 1.5 V to 3.1 V

• Self-shielding package concept

• Integrated supply decoupling capacitor

• Optimized performance at a supply current of 5.8 mA

• Power-down mode current consumption < 1 µA

• Integrated temperature stabilized bias for easy design.

• Requires only one input matching inductor

• Input and output DC decoupled

• ESD protection on all pins (HBM > 2 kV)

• Integrated matching for the output

• Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:

SOT1232

• 180 GHz transit frequency - SiGe:C technology

• Moisture sensitivity level 1

12 3 4 5 6 7...15

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