Datasheet > BGSA142GN12

BGSA142GN12

更新时间： 2024-01-03 09:48:11

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BGSA142GN12 数据手册

SP003597102

BGSA142GN12

High RF Voltage SP4T Switch

Features



Designed for high linearity and high RF voltage tuning applications

Multiple selectable switch configurations:

Each throw directly and independently controlled

Low R_ONresistance of 1.75 Ω at each port in ON state

Low C_OFFcapacitance of 110 fF at each port in OFF state

High RF operating voltage of 72 V at RFx and 67 V at RFC in OFF state

Low harmonic generation

3 GPIO pins control interface

Supply voltage range: 1.65 to 3.6 V

No RF parameter change within supply voltage range

Small form factor 1.5 mm x 1.5 mm (MSL1, 260° C per JEDEC J-STD-020)

RoHS and WEEE compliant package



Description

The BGSA142GN12 is a versatile direct mapping Single-Pole Quad Throw (SP4T) RF switch optimized for low

C_OFFas well as low R_ONenabling applications up to 6.0 GHz. GPIO digital control lines offer the possibility to

adopt SP4T, SPDT along with SPST topology for an optimum flexibility in RF Front-End designs.

The BGSA142GN12 includes 4 low R_ONand high RF voltage ports making it ideal for antenna tuning and tunable

matching network applications. RFC as well as RF1, RF2, RF3 and RF4 can handle high RF Voltage (bidirectional

RF Voltage handling). Due to its very high RF voltage ruggedness on all RF ports, it is suited for switching any

reactive devices such as inductors and capacitors without significant losses.

Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level,

resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only

required if DC voltage is applied externally.

Datasheet Summary

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Please read the Important Notice and Warnings at the end of this document

page 1 of 2

Revision 1.1

2020-02-17

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