Datasheet > BGD814_15

BGD814_15

更新时间： 2022-02-26 12:57:37

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
12页	78K
描述
860 MHz, 20 dB gain power doubler amplifier

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BGD814_15 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 20 dB gain power doubler ampliﬁer

BGD814

CHARACTERISTICS

Bandwidth 40 to 870 MHz; V_B= 24 V; T_mb= 35 °C; Z_S= Z_L= 75 Ω.

SYMBOL

PARAMETER

power gain

CONDITIONS

MIN.

TYP. MAX. UNIT

G_p

f = 45 MHz

19.7

20.5

0.5

−

20.3

21.5

1.5

f = 870 MHz

slope straight line

f = 45 to 870 MHz; note 1

f = 45 to 100 MHz

ﬂatness straight line

±0.25 dB

f = 100 to 800 MHz

−

±0.5

0.1

−

deg

f = 800 to 870 MHz

−0.4

−45

−

s₁₁

input return losses

f = 45 to 80 MHz

f = 80 to 160 MHz

−

f = 160 to 320 MHz

−

f = 320 to 550 MHz

−

f = 550 to 650 MHz

−

f = 650 to 750 MHz

−

f = 750 to 870 MHz

−

f = 870 to 914 MHz

−

s₂₂

output return losses

f = 45 to 80 MHz

−

f = 80 to 160 MHz

−

f = 160 to 320 MHz

−

f = 320 to 550 MHz

−

f = 550 to 650 MHz

−

f = 650 to 750 MHz

−

f = 750 to 870 MHz

−

f = 870 to 914 MHz

−

s₂₁

phase response

f = 50 MHz

+45

−66

CTB

composite triple beat

79 chs ﬂat; V_o= 44 dBmV; f_m= 547.25 MHz

112 chs ﬂat; V_o= 44 dBmV; f_m= 745.25 MHz

132 chs ﬂat; V_o= 44 dBmV; f_m= 859.25 MHz

−

−60.5 dB

−56 dB

−55.5 dB

−

112 chs; f_m= 547.25 MHz; V_o= 50.2 dBmV at

745 MHz; note 2

−

79 chs; f_m= 331.25 MHz; V_o= 47.3 dBmV at

547 MHz; note 3

−

−65

X_mod

cross modulation

79 chs ﬂat; V_o= 44 dBmV; f_m= 55.25 MHz

112 chs ﬂat; V_o= 44 dBmV; f_m= 55.25 MHz

132 chs ﬂat; V_o= 44 dBmV; f_m= 55.25 MHz

−

−66

−62.5 dB

−61

−57

112 chs; f_m= 745.25 MHz; V_o= 50.2 dBmV at

745 MHz; note 2

79 chs; f_m= 445.25 MHz; V_o= 47.3 dBmV at

547 MHz; note 3

−

−66

2001 Nov 01

1 234 5 6 7...12

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