Datasheet > BGD712C_15

BGD712C_15

更新时间： 2022-02-26 12:57:37

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
7页	54K
描述
750 MHz, 18.5 dB gain power doubler amplifier

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BGD712C_15 数据手册

BGD712C

NXP Semiconductors

750 MHz, 18.5 dB gain power doubler ampliﬁer

2. Pinning information

Table 2:

Pinning

Description

input

Simpliﬁed outline

Symbol

common

+V_B

1 3 5 7 9

3 7 8

common

output

sym095

3. Ordering information

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BGD712C

rectangular single-ended package; aluminium ﬂange;

2 vertical mounting holes; 2 × 6-32 UNC and 2 extra

horizontal mounting holes; 7 gold-plated in-line leads

SOT115J

4. Limiting values

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

V_B

supply voltage

V_i

input voltage

dBmV

°C

T_stg

T_mb

storage temperature

mounting base temperature

−40

−20

+100

°C

BGD712C_2

Product data sheet

Rev. 02 — 16 August 2007

2 of 7

123 4 5 6 7

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