Datasheet > BGD712_2015

BGD712_2015

更新时间： 2022-02-26 12:57:38

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
8页	64K
描述
750 MHz, 18.5 dB gain power doubler amplifier

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BGD712_2015 数据手册

Philips Semiconductors

Product speciﬁcation

750 MHz, 18.5 dB gain power doubler ampliﬁer

BGD712

CHARACTERISTICS

Bandwidth 40 to 750 MHz; V_B= 24 V; T_mb= 35 °C; Z_S= Z_L= 75 Ω

SYMBOL

PARAMETER

power gain

CONDITIONS

MIN.

TYP. MAX. UNIT

G_p

f = 45 MHz

18.2

0.5

−

18.5

19.5

18.8

f = 750 MHz

slope straight line

f = 45 to 750 MHz; note 1

f = 45 to 100 MHz

f = 100 to 700 MHz

f = 700 to 750 MHz

f = 45 to 80 MHz

1.5

ﬂatness straight line

−

±0.35 dB

±0.5 dB

±0.15 dB

−

S₁₁

input return losses

−45

−

deg

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 550 MHz

f = 550 to 650 MHz

f = 650 to 750 MHz

f = 750 to 790 MHz

f = 45 to 80 MHz

−

S₂₂

output return losses

−

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 550 MHz

f = 550 to 650 MHz

f = 650 to 750 MHz

f = 750 to 790 MHz

f = 50 MHz

−

S₂₁

phase response

−

+45

−62

CTB

composite triple beat

112 channels ﬂat; V_o= 44 dBmV;

f_m= 745.25 MHz

−

79 channels ﬂat; V_o= 44 dBmV;

f_m= 547.25 MHz

−

−68

−63

−69

−60

79 channels; f_m= 445.25 MHz;

V_o= 49.3 dBmV at 547 MHz; note 2

X_mod

cross modulation

112 channels ﬂat; V_o= 44 dBmV;

f_m= 55.25 MHz

79 channels ﬂat; V_o= 44 dBmV;

f_m= 55.25 MHz

79 channels; f_m= 745.25 MHz;

V_o= 49.3 dBmV at 547 MHz; note 2

2001 Nov 02

1 234 5 6 7 8

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