Datasheet > BG3430R

BG3430R

更新时间： 2024-10-14 08:52:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	544K
描述
DUAL N-Channel MOSFET Tetrode

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BG3430R 数据手册

BG3430R

DUAL N-Channel MOSFET Tetrode

• Designed for input stages of

2 band tuners

• Two AGC amplifiers in one single package

with on-chip internal switch

• Only one switching line to control both FETs

• Integrated gate protection diodes

• High gain, low noise figure, high AGC-range

• Good cross modulation at gain reduction

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Detailed functional diagram on page 4

BG3430R

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

Pin Configuration

Marking

BG3430R

SOT363

1=G1* 2=S

3=D* 4=D** 5=G2 6=G1** KNs

* For amp. A; ** for amp. B

180° rotated tape loading orientation available

2009-10-01

12 3 4 5 6 7...11

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