Datasheet > BFR94A_10

BFR94A_10

更新时间： 2024-09-28 08:52:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	307K
描述
NPN 5 GHz wideband transistor

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BFR94A_10 数据手册

BFR94A

NPN 5 GHz wideband transistor

Rev. 3 — 15 November 2010

Product data sheet

1. Product profile

1.1 General description

NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92

1.2 Features and benefits

High power gain

Low noise figure

Low intermodulation distortion

AEC-Q101 qualified

1.3 Applications

RF wideband amplifiers and oscillators

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_CBO

V_CEO

collector-base voltage

collector-emitter

voltage

I_C

collector current

P_tot

C_re

total power dissipation T_sp≤ 95 °C

300 mW

feedback capacitance I_C= i_C= 0 mA; V_CE= 10 V;

f = 1 MHz

0.35

f_T

transition frequency

I_C= 15 mA; V_CE= 10 V;

f = 500 MHz

GHz

G_UM

unilateral power gain

I_C= 15 mA; V_CE= 10 V;

_amb= 25 °C

f = 1 GHz

f = 2 GHz

V_O

noise figure

I_C= 5 mA; V_CE= 10 V; f = 1 GHz;

Γ_S= Γ_opt; T_amb= 25 °C

2.1

output voltage

IMD = −60 dB; I_C= 14 mA;

V_CE= 10 V; R_L= 75 Ω;

f_p+ f_q− f_r= 793.25 MHz

150

12 3 4 5 6 7...14

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