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BFR96G PDF预览

BFR96G

更新时间: 2024-09-28 03:21:47
品牌 Logo 应用领域
ADPOW 晶体小信号双极晶体管射频小信号双极晶体管开关微波
页数 文件大小 规格书
5页 121K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

BFR96G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DISK BUTTON, O-PRDB-F3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:3.2 pF
集电极-发射极最大电压:15 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PRDB-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHzBase Number Matches:1

BFR96G 数据手册

 浏览型号BFR96G的Datasheet PDF文件第2页浏览型号BFR96G的Datasheet PDF文件第3页浏览型号BFR96G的Datasheet PDF文件第4页浏览型号BFR96G的Datasheet PDF文件第5页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
BFR96  
BFR96G  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
* G Denotes RoHS Compliant, Pb Free Terminal Finish  
Features  
·
·
·
High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA  
Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz  
High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz  
Macro T  
(STYLE #2)  
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in  
applications requiring fast switching times.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
15  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
20  
3.0  
100  
Thermal Data  
P
D
Total Device Dissipation @ TC = 100ºC  
Derate above 100ºC  
500  
10  
mWatts  
mW/ ºC  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  
Rev A 9/2005  

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