Datasheet > BFR96TS_08

BFR96TS_08

更新时间： 2024-09-28 06:42:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
9页	144K
描述
Silicon NPN Planar RF Transistor

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中文翻译

获取价格

数据手册

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BFR96TS_08 数据手册

Not for new design, this product will be obsoleted soon

BFR96TS

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• High power gain

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

19039

Electrostatic sensitive device.

Observe precautions for handling.

Applications

RF amplifier up to GHz range specially for wide band

antenna amplifier.

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 111 mg

Marking: BFR96TS

Pinning: 1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

2.5

100

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 45 °C

P_tot

T_j

700

150

T_stg

- 65 to + 150

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

150

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (40 x 25 x 1.5) mm³plated with 35 μm Cu

Document Number 85037

Rev. 1.6, 08-Sep-08

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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