BFP180W

更新时间： 2024-11-08 22:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管通信
页数	文件大小	规格书
7页	63K
描述
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

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BFP180W 数据手册

BFP 180W

NPN Silicon RF Transistor

• For low-power amplifiers in mobile

communication systems (pager) at collector

currents from 0.2 to 2.5mA

f = 7GHz

• F = 2.1dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 180W RDs

Q62702-F1500

1 = E 2 = C 3 = E 4 = B SOT-343

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

0.5

Total power dissipation

tot

≤

126 °C

Junction temperature

Ambient temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction - soldering point

thJS

785

K/W

1) T is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Dec-12-1996

12 3 4 5 6 7

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