Datasheet > BFG424F_15

BFG424F_15

更新时间： 2024-10-02 01:20:15

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
13页	106K
描述
NPN 25 GHz wideband transistor

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BFG424F_15 数据手册

BFG424F

NPN 25 GHz wideband transistor

Rev. 01 — 21 March 2006

Product data sheet

1. Product proﬁle

1.1 General description

NPN double polysilicon wideband transistor with buried layer for low voltage applications

in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

MSC895

1.2 Features

■ Very high power gain

■ Low noise ﬁgure

■ High transition frequency

■ Emitter is thermal lead

■ Low feedback capacitance

1.3 Applications

■ Radio Frequency (RF) front end wideband applications such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone

System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVison (SATV) tuners

◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise

Block (LNB)

1.4 Quick reference data

Table 1:

Quick reference data

Symbol Parameter

Conditions

open emitter

Min Typ Max Unit

V_CBO

V_CEO

I_C

collector-base voltage

4.5

collector-emitter voltage open base

collector current

[1]

P_tot

total power dissipation

T_sp≤ 90 °C

135 mW

12 3 4 5 6 7...13

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