BF994

更新时间： 2024-11-11 22:31:39

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管栅
页数	文件大小	规格书
7页	120K
描述
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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数据手册

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BF994 数据手册

BF994S

Vishay Telefunken

N–Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Input- and mixer stages especially VHF TV-tuners.

Features

Integrated gate protection diodes

High cross modulation performance

Low noise figure

High AGC-range

Low feedback capacitance

Low input capacitance

G₂

G₁

13 579

94 9279

BF994 Marking: MG

Plastic case (SOT 143)

12623

1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Drain - source voltage

Drain current

Gate 1/Gate 2 - source peak current

Total power dissipation

Channel temperature

Test Conditions

Type

Symbol

Value

200

150

Unit

±I

G1/G2SM

≤ 60 C

tot

amb

Storage temperature range

stg

–55 to +150

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thChA

Value

450

Unit

K/W

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85008

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (7)

12 3 4 5 6 7

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与BF994相关器件

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BF994S	NXP	获取价格	N-channel dual-gate MOS-FET
BF994S	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF994S	INFINEON	获取价格	Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer sta
BF994S	YAGEO	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Silicon
BF994S,215	NXP	获取价格	N-channel dual-gate MOSFET SOT-143 4-Pin
BF994S_15	JMNIC	获取价格	N-channel dual-gate MOS-FET
BF994S_2015	JMNIC	获取价格	N-channel dual-gate MOS-FET
BF994SA	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF994SA-GS08	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
BF994SA-GS18	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C