Datasheet > BF821-Q

BF821-Q

更新时间： 2024-03-03 10:11:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	175K
描述
PNP high voltage transistorProduction

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BF821-Q 数据手册

BF821-Q

PNP high voltage transistor

7 June 2023

Product data sheet

1. General description

PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

NPN complements: BF820-Q and BF822-Q.

2. Features and benefits

•

Low current (max. 50 mA)

•

High voltage (max. 300 V).

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Telephony and professional communication equipment.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-300

I_C

collector current

DC current gain

-50

h_FE

V_CE= -20 V; I_C= -25 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym132

SOT23

12 3 4 5 6 7

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