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BF495C-AMMO PDF预览

BF495C-AMMO

更新时间: 2024-11-23 13:05:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 50K
描述
TRANSISTOR 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

BF495C-AMMO 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.51
其他特性:LOW NOISE最大集电极电流 (IC):0.03 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):67
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

BF495C-AMMO 数据手册

 浏览型号BF495C-AMMO的Datasheet PDF文件第2页浏览型号BF495C-AMMO的Datasheet PDF文件第3页浏览型号BF495C-AMMO的Datasheet PDF文件第4页浏览型号BF495C-AMMO的Datasheet PDF文件第5页浏览型号BF495C-AMMO的Datasheet PDF文件第6页浏览型号BF495C-AMMO的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BF494; BF495  
NPN medium frequency transistors  
1997 Jul 08  
Product specification  
Supersedes data of September 1994  
File under Discrete Semiconductors, SC04  

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