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BF423

更新时间: 2024-11-20 22:48:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 128K
描述
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

BF423 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.56最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):50
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):60 MHz
Base Number Matches:1

BF423 数据手册

 浏览型号BF423的Datasheet PDF文件第2页浏览型号BF423的Datasheet PDF文件第3页浏览型号BF423的Datasheet PDF文件第4页 
PNP Silicon Transistors  
With High Reverse Voltage  
BF 421  
BF 423  
High breakdown voltage  
Low collector-emitter saturation voltage  
Low capacitance  
Complementary types: BF 420, BF 422 (NPN)  
2
3
1
Package1)  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BF 421  
BF 423  
Q62702-F532  
Q62702-F496  
E
C
B
TO-92  
Maximum Ratings  
Parameter  
Symbol Values  
Unit  
BF 421  
BF 423  
250  
Collector-emitter voltage  
Collector-emitter voltage  
V
V
CE0  
CER  
V
300  
RBE = 2.7 k  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
CB0  
EB0  
300  
250  
5
IC  
50  
mA  
Peak base current  
I
BM  
100  
830  
150  
Total power dissipation, T  
C
= 88 ˚C Ptot  
mW  
˚C  
Junction temperature  
T
T
j
Storage temperature range  
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient  
Junction - case2)  
R
th JA  
th JC  
150  
75  
K/W  
R
1)  
For detailed information see chapter Package Outlines.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
2)  
5.91  
Semiconductor Group  
1

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