5秒后页面跳转
BF423-AP PDF预览

BF423-AP

更新时间: 2024-11-21 20:42:31
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 269K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

BF423-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

BF423-AP 数据手册

 浏览型号BF423-AP的Datasheet PDF文件第2页 
M C C  
BF421  
BF423  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Capable of 0.83Watts of Power Dissipation.  
Collector-current 0.1A  
Collector-base Voltage: BF421 300V  
BF423 250V  
Operating and storage junction temperature range: -55OC to +150OC  
TO-92  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
A
E
·
Marking: Type Number  
·
Halogen free available upon request by adding suffix "-HF"  
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V (BR)CEO  
Collector-Emitter Breakdown Voltage  
(I =1.0mAdc, IB=0)  
C
BF421  
BF423  
300  
250  
---  
---  
Vdc  
C
V(BR)CBO  
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
BF421  
BF423  
300  
250  
5.0  
---  
---  
---  
Vdc  
Adc  
V(BR)EBO  
ICBO  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(V CB=200Vdc, IE=0)  
Emitter Cutoff Current  
---  
---  
0.01  
0.05  
uAdc  
uAdc  
IEBO  
D
(V EB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
h FE  
DC Current Gain  
50  
---  
60  
---  
0.6  
---  
---  
Vdc  
MHz  
(I =25mAdc,V CE=20Vdc)  
C
E
E
C
C
B
V CE(sat)  
Collector-Emitter Saturation Voltage  
B
(I =30mAdc, IB=5.0mAdc)  
C
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
fT  
Transition Frequency  
G
(VCE=10Vdc, I =10mA dc, f=100MHz)  
C
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 2  
Revision: D  
2013/01/01  

与BF423-AP相关器件

型号 品牌 获取价格 描述 数据表
BF423-AP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BF423-B MCC

获取价格

Transistor
BF423-BP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
BF423-BP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BF423G ONSEMI

获取价格

High Voltage Transistors
BF423L NXP

获取价格

PNP high-voltage transistors
BF423RL MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BF423RL ONSEMI

获取价格

500mA, 250V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
BF423RL1 MOTOROLA

获取价格

500mA, 250V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BF423RLRA MOTOROLA

获取价格

暂无描述