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BF423 PDF预览

BF423

更新时间: 2024-11-21 03:21:43
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页数 文件大小 规格书
3页 87K
描述
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

BF423 数据手册

 浏览型号BF423的Datasheet PDF文件第2页浏览型号BF423的Datasheet PDF文件第3页 
Transys  
Electronics  
L
I M I T E D  
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE  
VIDEO TRANSISTORS  
BF421  
BF423  
TO-92  
Plastic Package  
High Voltage Video Amplifier  
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
423  
421  
UNITS  
VCEO  
VCBO  
VEBO  
IC  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
250  
250  
300  
300  
V
V
5
500  
V
Collector Current Continuous  
Power Dissipation@ Ta=25ºC  
Derate Above 25ºC  
mA  
PD  
800  
mW  
mW/ºC  
W
6.4  
PD  
Power Dissipation@ Tc=25ºC  
Derate Above 25ºC  
2.75  
22  
mW/ºC  
ºC  
Tj, Tstg  
Operating And Storage Junction  
Temperature Range  
-55 to +150  
THERMAL RESISTANCE  
Junction to ambient  
Junction to case  
Rth(j-a)  
Rth(j-c)  
156  
45  
ºC/W  
ºC/W  
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
423  
>250  
>250  
>5  
421  
>300  
>300  
>5  
UNITS  
VCEO  
VCBO  
VEBO  
ICBO  
IEBO  
hFE  
IC=1.0mA,IB=0  
IC=100µA.IE=0  
IE=100µA, IC=0  
VCB=200V,IE=0  
VEB=5.0V, IC=0  
IC=25mA,VCE=20V  
Collector Emitter Voltage*  
Collector Base Voltage  
EmitterBase Voltage  
V
V
V
Collector-Cut off Current  
Emitter-Cut off Current  
DC Current Gain  
<10  
<100  
>50  
<0.5  
<2  
<10  
<100  
>50  
<0.5  
<2  
nA  
nA  
VCE(sat) IC=20mA,IB=2mA  
VBE(sat) IC=20mA,IB=2mA  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
V
V

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