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BF393

更新时间: 2024-11-23 22:27:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管高压
页数 文件大小 规格书
4页 92K
描述
High Voltage Transistor(NPN Silicon)

BF393 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226AA, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.32最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

BF393 数据手册

 浏览型号BF393的Datasheet PDF文件第2页浏览型号BF393的Datasheet PDF文件第3页浏览型号BF393的Datasheet PDF文件第4页 
Order this document  
by BF393/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
300  
300  
6.0  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to  
Ambient  
R
200  
°C/W  
JA  
Thermal Resistance, Junction to Case  
R
83.3  
°C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I =0)  
V
V
Vdc  
Vdc  
(BR)CEO  
300  
300  
6.0  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
µAdc  
µAdc  
CBO  
0.1  
0.1  
CB  
Emitter Cutoff Current  
(V = 6.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s; Duty Cycle  
2.0%.  
(Replaces BF392/D)  
Motorola, Inc. 1997

BF393 替代型号

型号 品牌 替代类型 描述 数据表
BF393ZL1G ONSEMI

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