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BF393

更新时间: 2024-11-24 08:52:19
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
4页 119K
描述
High Voltage Transistors(NPN)

BF393 数据手册

 浏览型号BF393的Datasheet PDF文件第2页浏览型号BF393的Datasheet PDF文件第3页浏览型号BF393的Datasheet PDF文件第4页 
Order this document  
by BF392/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BF392  
BF393  
300  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CBO  
V
EBO  
250  
250  
1
2
3
300  
6.0  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I =0)  
V
Vdc  
(BR)CEO  
BF392  
BF393  
250  
300  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
BF392  
BF393  
250  
300  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
(BR)EBO  
BF392  
BF393  
6.0  
6.0  
E
C
Collector Cutoff Current  
I
µAdc  
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 200 Vdc, I = 0)  
BF392  
BF393  
0.1  
0.1  
E
= 200 Vdc, I = 0)  
E
Emitter Cutoff Current  
I
EBO  
(V  
EB  
(V  
EB  
= 6.0 Vdc, I = 0)  
BF392  
BF393  
0.1  
0.1  
C
= 6.0 Vdc, I = 0)  
C
1. Pulse Test: Pulse Width  
300 s; Duty Cycle  
2.0%.  
Motorola, Inc. 1996

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