Datasheet > BDY55_12

BDY55_12

更新时间： 2024-01-15 21:13:59

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	79K
描述
NPN SILICON TRANSISTORS, DIFFUSED MESA

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数据手册

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BDY55_12 数据手册

BDY55 – BDY56

NPN SILICON TRANSISTORS, DIFFUSED MESA

The BDY55 and BDY56 are mounted in TO-3 metal package.

LF Large Signal Power Amplification

High Current Fast Switching.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BDY55

BDY56

BDY55

BDY56

120

100

150

V_CEO

V_CBO

Collector-Emitter Voltage

Collector-Base Voltage

V_EBO

I_C

I_B

Emitter-Base Voltage

Collector Current

Base Current

P_TOT

T_J

T_S

Power Dissipation

Junction Temperature

Storage Temperature

@ T_C= 25°

117

200

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

R_thJ-C

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与BDY55_12相关器件

型号	品牌	获取价格	描述	数据表
BDY55X	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY56	ISC	获取价格	Silicon NPN Power Transistors
BDY56	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDY56	COMSET	获取价格	NPN SILICON TRANSISTORS, DIFFUSED MESA
BDY56	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY56	NJSEMI	获取价格	Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3
BDY57	ISC	获取价格	Silicon NPN Power Transistors
BDY57	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDY57	COMSET	获取价格	NPN SILICON TRANSISTORS, DIFFUSED MESA
BDY57	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3