Datasheet > BDY56

BDY56

更新时间： 2024-09-27 08:52:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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BDY56 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDY56

DESCRIPTION

·With TO-3 package

·High current capability

·Fast switching speed

APPLICATIONS

·LF large signal power amplification.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

150

120

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

117

℃

T_j

200

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.5

℃/W

12 3

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与BDY56相关器件

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BDY58	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDY58	ISC	获取价格	isc Silicon NPN Power Transistor
BDY58	NJSEMI	获取价格	Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3