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BDX54B PDF预览

BDX54B

更新时间: 2024-11-28 22:48:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 83K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDX54B 数据手册

 浏览型号BDX54B的Datasheet PDF文件第2页浏览型号BDX54B的Datasheet PDF文件第3页浏览型号BDX54B的Datasheet PDF文件第4页浏览型号BDX54B的Datasheet PDF文件第5页浏览型号BDX54B的Datasheet PDF文件第6页 
BDX53B / BDX53C  
BDX54B / BDX54C  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
APPLICATIONS  
AUDIO AMPLIFIERS  
LINEARAND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
2
DESCRIPTION  
1
The BDX53B and BDX53C are silicon  
Epitaxial-Base NPN power transistors in  
monolithic Darlington configuration mounted in  
Jedec TO-220 plastic package. They are intented  
for use in hammer drivers, audio amplifiers and  
other medium power linear and switching  
applications.  
TO-220  
The complementary PNP types are BDX54B and  
BDX54C respectively.  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BDX53B  
BDX54B  
80  
BDX53C  
BDX54C  
100  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-base Voltage (IC = 0)  
Collector Current  
V
V
80  
100  
5
8
V
A
ICM  
IB  
Collector Peak Current (repetitive)  
12  
0.2  
60  
A
Base Current  
A
o
Ptot  
Tstg  
Tj  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
September 1999  

BDX54B 替代型号

型号 品牌 替代类型 描述 数据表
BDW94CFP STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX54BG ONSEMI

功能相似

Plastic Medium-Power Complementary Silicon Transistors
BDW46G ONSEMI

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Darlington Complementary Silicon Power Transistors

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