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BDX54BG PDF预览

BDX54BG

更新时间： 2024-02-11 00:11:28
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 87K
描述
Plastic Medium-Power Complementary Silicon Transistors

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中文翻译

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BDX54BG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：TO-220, 3 PIN针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.66最大集电极电流 (IC)：8 A
集电极-发射极最大电压：45 V配置：DARLINGTON WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE极性/信道类型：PNP
最大功率耗散 (Abs)：60 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：20 MHzBase Number Matches：1

BDX54BG 数据手册

 浏览型号BDX54BG的Datasheet PDF文件第2页浏览型号BDX54BG的Datasheet PDF文件第3页浏览型号BDX54BG的Datasheet PDF文件第4页浏览型号BDX54BG的Datasheet PDF文件第5页浏览型号BDX54BG的Datasheet PDF文件第6页浏览型号BDX54BG的Datasheet PDF文件第7页 
BDX53B, BDX53C (NPN),  
BDX54B, BDX54C (PNP)  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLTS, 65 WATTS  
Features  
• High DC Current Gain −  
h
= 2500 (Typ) @ I = 4.0 Adc  
C
FE  
• Collector Emitter Sustaining Voltage − @ 100 mAdc  
V
V
= 80 Vdc (Min) − BDX53B, 54B  
= 100 Vdc (Min) − BDX53C, 54C  
CEO(sus)  
CEO(sus)  
• Low Collector−Emitter Saturation Voltage −  
4
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
= 4.0 Vdc (Max) @ I = 5.0 Adc  
CE(sat)  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Pb−Free Packages are Available*  
TO−220AB  
CASE 221A  
MAXIMUM RATINGS  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
1
2
Collector−Emitter Voltage  
V
Vdc  
3
CEO  
BDX53B, BDX54B  
80  
BDX53C, BDX54C  
100  
Collector−Base Voltage  
V
Vdc  
CB  
EB  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
4
Collector Current − Continuous  
− Peak  
I
8.0  
12  
C
Collector  
Base Current  
I
0.2  
Adc  
B
Total Device Dissipation @ T = 25°C  
P
65  
0.48  
W
W/°C  
C
D
Derate above 25°C  
BDX5xyG  
AY WW  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
1
3
Base  
Emitter  
2
Characteristic  
Symbol  
Max  
70  
Unit  
°C/W  
°C/W  
Collector  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
R
q
JC  
1.92  
BDX5xy = Device Code  
x = 3 or 4  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
y = B or C  
= Assembly Location  
A
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 12  
BDX53B/D  
1234567

中文翻译

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BDX54BG 替代型号

型号 品牌 替代类型 描述 数据表
2N6042G ONSEMI

类似代替

 Plastic Medium−Power Complementary Silicon Transistors
BDX54CG ONSEMI

类似代替

 Plastic Medium-Power Complementary Silicon Transistors
BDW47G ONSEMI

类似代替

 Darlington Complementary Silicon Power Transistors

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BDX54BU MOTOROLA

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 		8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX54BU2 MOTOROLA

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BDX54BWD MOTOROLA

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 		8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB

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