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BDX54C

更新时间: 2024-01-01 03:45:42
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描述
Complementary Silicon Power Darlington Ttransistors

BDX54C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66最大集电极电流 (IC):8 A
集电极-发射极最大电压:45 V配置:DARLINGTON WITH BUILT-IN DIODE
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

BDX54C 数据手册

  
TIGER ELECTRONIC CO.,LTD  
Product specification  
Complementary Silicon Power Darlington Ttransistors  
BDX53C / BDX54C  
DESCRIPTION  
The BDX53C are silicon Epitaxial-Base NPN power transistors in  
monolithic Darlington configuration mounted in Jedec TO-220 plastic package.  
They are intented for use in hammer drivers, audio amplifiers and  
other medium power linear and switching applications.  
The complementary PNP types are BDX54C respectively.  
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value Unit  
Symbol  
VCBO  
100  
V
VCEO  
VEBO  
IC  
100  
5
V
V
8.0  
0.2  
60  
A
Base Current  
IB  
A
Total Dissipation at  
Ptot  
Tj  
W
oC  
150  
Max. Operating Junction Temperature  
Storage Temperature  
TO-220  
Tstg  
-55~150 oC  
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)  
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Unit  
Collector Cut-off Current  
ICBO  
VCB=100V, IE=0  
VCE=50V, IB=0  
VEB=5.0V, IC=0  
0.2  
0.5  
2.0  
mA  
mA  
mA  
V
Collector Cut-off Current  
Emitter Cut-off Current  
ICEO  
IEBO  
100  
750  
Collector-Emitter Sustaining Voltage  
DC Current Gain  
VCEO IC=100mA, IB=0  
hFE  
VCE=3V, IC=3.0A  
IC=3.0A,IB=12mA  
VCE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Parallel-diode Forward Voltage  
2.0  
2.5  
2.5  
V
V
V
VBE(sat) IC=3.0A,IB=12mA  
IF=3A  
VF  

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