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BDX54B PDF预览

BDX54B

更新时间: 2024-01-08 04:06:30
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
Silicon PNP Power Transistors

BDX54B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66最大集电极电流 (IC):8 A
集电极-发射极最大电压:45 V配置:DARLINGTON WITH BUILT-IN DIODE
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

BDX54B 数据手册

 浏览型号BDX54B的Datasheet PDF文件第2页浏览型号BDX54B的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BDX54/A/B/C  
DESCRIPTION  
·With TO-220C package  
·High DC current gain  
·DARLINGTON  
·Complement to type BDX53/A/B/C  
APPLICATIONS  
·Power linear and switching applications  
·Hammer drivers,audio amplifiers  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-45  
UNIT  
BDX54  
BDX54A  
BDX54B  
BDX54C  
BDX54  
-60  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-45  
BDX54A  
BDX54B  
BDX54C  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current  
Open collector  
V
A
-8  
-12  
A
-0.2  
60  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
2.08  
/W  

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