Datasheet > BDX33CBU

BDX33CBU

更新时间： 2024-11-21 03:30:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	360K
描述
10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BDX33CBU 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain — h = 2500 (typ.) at I = 4.0

FE C

Collector–Emitter Sustaining Voltage at 100 mAdc

= 80 Vdc (min.) — BDX33B, 34B

= 100 Vdc (min.) — BDX33C, 34C

CEO(sus)

•

Low Collector–Emitter Saturation Voltage

= 2.5 Vdc (max.) at I = 3.0 Adc — BDX33B, 33C/34B, 34C

Monolithic Construction with Build–In Base–Emitter Shunt resistors

TO–220AB Compact Package

*Motorola Preferred Device

CE(sat)

•

DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

MAXIMUM RATINGS

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

BDX33B

BDX34B

BDX33C

BDX34C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.25

Adc

Total Device Dissipation

@ T = 25 C

0.56

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.78

C/W

θJC

100

120

140 160

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–217

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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