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BDX33D PDF预览

BDX33D

更新时间: 2024-11-24 03:21:39
品牌 Logo 应用领域
TRSYS 晶体晶体管
页数 文件大小 规格书
3页 100K
描述
NPN/PNP PLASTIC POWER TRANSISTORS

BDX33D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):10 A配置:DARLINGTON
最小直流电流增益 (hFE):750最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):70 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):20 MHzBase Number Matches:1

BDX33D 数据手册

 浏览型号BDX33D的Datasheet PDF文件第2页浏览型号BDX33D的Datasheet PDF文件第3页 
Transys  
Electronics  
L
I M I T E D  
NPN/PNP PLASTIC POWER TRANSISTORS  
BDX33, 33A, 33B, 33C, 33D  
BDX34, 34A, 34B, 34C, 34D  
TO-220  
Plastic Package  
Power Darlington for Linear Switchilng Application  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
BDX33 BDX33A BDX33B BDX33C BDX33D UNIT  
BDX34 BDX34A BDX34B BDX34C BDX34D  
VCEO  
VCBO  
VEBO  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current -  
Continuous  
45  
45  
60  
60  
80  
80  
5.0  
100  
100  
120  
120  
V
V
V
IC  
ICM  
IB  
10  
15  
0.25  
A
A
A
Peak  
Base Current  
Device Dissipation  
@ Tc=25ºC  
PD  
70  
W
Derate Above 25ºC  
Operating And Storage  
Junction  
Temperature Range  
THERMAL RESISTANCE  
Junction to Case  
0.56  
W/ºC  
Tj, Tstg  
-65 to +150  
1.78  
ºC  
Rth(j-c)  
ºC/W  
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL  
TEST  
CONDITION  
BDX33 BDX33A BDX33B BDX33C BDX33D UNIT  
BDX34 BDX34A BDX34B BDX34C BDX34D  
VCEO(sus)  
*
IC=100mA, IB=0  
Breakdown (sus) Voltage  
>45  
>60  
>80  
>100  
>120  
V
VCER(sus)  
VCEX(sus)  
ICEO  
*
IC=100mA,  
RBE=100 W  
IC=100mA,  
VBE=1.5V  
VCE=1/2rated  
VCEO, IB=0  
>45  
>45  
<0.5  
>60  
>60  
<0.5  
>80  
>80  
<0.5  
>100  
>100  
<0.5  
>120  
>120  
<0.5  
V
V
*
Collector-Cut off Current  
mA  
Tc=100ºC  
VCE=1/2rated  
VCEO, IB=0  
<10  
<1  
<10  
<1  
<10  
<1  
<10  
<1  
<10  
<1  
mA  
mA  
mA  
ICBO  
IE=0,VCB=Rated  
VCBO  
,
Tc=100ºC  
IE=0,VCB=Rated  
VCBO  
,
<5  
<5  
<5  
<5  
<5  

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