BDX33C

更新时间： 2024-11-30 08:52:03

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	857K
描述
NPN Silicon Power Darlingtons

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BDX33C 数据手册

M C C

BDX33

THRU

BDX33D

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

)HDWXUHVꢀ

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN Silicon

Power Darlingtons

•

Designed For Complementary Use with BDX34, BDX34A, BDX34B,

BDX34C and BDX34D

70W at 25 Cass Temperature

•

10A Continuous Collector Current

Minimum h_FEof 750 at 3.0V, 3.0A

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-220

Symbol

Rating

Collector-Base Voltage (I_E=0)

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

Collector-Emitter Voltage (I_B=0)

BDX33

BDX33A

Value

Unit

V_CBO

100

V_CEO

100

5.0

0.3

BDX33B

BDX33C

BDX33D

V_EBO

I_C

I_B

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Continuous Device Dissipation at (or below) 25

Case Temperature (see Note2)

Continuous Device Dissipation at (or below) 25

Free Air Temperature (see Note 3)

Operating Free Air Temperature Range

P_TOT

2.0

PIN 1.

PIN 2.

PIN 3.

BASE

T_J

T_STG

T_A

-55~+150

COLLECTOR

EMITTER

Storage Temperature Range

Operating Free-Air Temperature Range

DIMENSIONS

INCHES

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

MIN

14.22

9.65

MAX

15.88

10.67

NOTE

DIM

MIN

MAX

.625

2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/

3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/

.560

.380

.140

.420

.190

3.56

4.82

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

Symbol

Parameter

Collector-Emitter Breakdown

Voltage

Min

Typ

Max

Unit

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

V_(BR)CEO

(I_C=100mA, I_B=0,see note 3)

BDX33

BDX33A

BDX33B

BDX33C

100

.190

.210

4.83

5.33

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

BDX33D

.045

1.15

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

中文翻译

下载PDF

与BDX33C相关器件

型号	品牌	获取价格	描述	数据表
BDX33C16	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C16A	MOTOROLA	获取价格	10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33C-6200	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6226	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6261	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDX33C-6263	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33C-6264	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB

与BDX33C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

BDX33C

BDX33C 数据手册

与BDX33C相关器件

与BDX33C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BDX33C

BDX33C 数据手册

与BDX33C相关器件

与BDX33C相关文章

您还可以找

您在本页遇到什么问题？