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BDC05 PDF预览

BDC05

更新时间: 2024-11-13 22:27:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管高压
页数 文件大小 规格书
4页 145K
描述
One Watt High Voltage Transistor

BDC05 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
HTS代码:8541.29.00.75风险等级:5.92
最大集电极电流 (IC):0.5 A基于收集器的最大容量:2.8 pF
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:2.5 W最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
VCEsat-Max:2 VBase Number Matches:1

BDC05 数据手册

 浏览型号BDC05的Datasheet PDF文件第2页浏览型号BDC05的Datasheet PDF文件第3页浏览型号BDC05的Datasheet PDF文件第4页 
Order this document  
by BDC05/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
MAXIMUM RATINGS  
1
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
300  
300  
5.0  
Unit  
2
3
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
CASE 29–05, STYLE 14  
TO–92 (TO–226AE)  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
50  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
V
Vdc  
Vdc  
(BR)CEO  
300  
300  
5.0  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
µAdc  
µAdc  
CBO  
0.01  
10  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s; Duty Cycle  
2.0%.  
Motorola, Inc. 1996

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