BDC05RLRB

更新时间： 2024-11-14 13:05:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管高压
页数	文件大小	规格书
4页	145K
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数据手册

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BDC05RLRB 数据手册

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by BDC05/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

300

5.0

Unit

CEO

CBO

EBO

Vdc

CASE 29–05, STYLE 14

TO–92 (TO–226AE)

Vdc

Collector Current — Continuous

500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = 1.0 mAdc, I = 0)

Vdc

(BR)CEO

300

5.0

—

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 100 Adc, I = 0)

Vdc

(BR)EBO

—

Collector Cutoff Current

(V = 200 Vdc, I = 0)

µAdc

CBO

0.01

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

EBO

—

1. Pulse Test: Pulse Width

300 s; Duty Cycle

2.0%.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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