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BD9G401UEFJ-M PDF预览

BD9G401UEFJ-M

更新时间: 2024-11-04 11:13:55
品牌 Logo 应用领域
罗姆 - ROHM 开关生产线二极管稳压器
页数 文件大小 规格书
31页 1424K
描述
本IC是内置高边FET的二极管整流式降压型开关稳压器,支持在4.5V~42V的电源电压范围内工作。该产品通过电流模式控制实现了高速负载响应和简单的相位补偿设置。例如在小型二次侧电源应用中,可以将12V、24V等电源降压后输出3.3V、5V等电压。另外,该产品还具有与外部CLK同步的功能,可以进行噪声管理。本IC是为提高生产效率而对本系列产品中的BD9G401EFJ-M变更生产线后形成的型号,在新项目选型时,建议选择该型号,在技术规格书中的保证特性并没有差异。此外,由于文档和设计模型等也没有差异,因此除非另有说明,ROHM将公开BD9G401EFJ-ME2的数据。

BD9G401UEFJ-M 数据手册

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Datasheet  
4.5V to 42V Input Voltage Range 3.5A Output Current Integrated FET  
1ch Buck Converter  
BD9G401EFJ-M BD9G401UEFJ-M  
General Description  
Key Specifications  
Input Voltage  
BD9G401EFJ-M and BD9G401UEFJ-M are buck  
converters with built-in high side MOSFET. It has an  
input voltage range of 4.5V to 42V. Current mode  
architecture provides fast transient response and a  
simple phase compensation setup.  
The IC is mainly used as a secondary side power  
supply: for example, a step-down output of 3.3V/5V can  
be produced from voltage power supply such as 12V or  
24V. In addition, it has a synchronization function with  
an external CLK that provides noise management.  
4.5V to 42V  
(Ta= 25°C) ±1.5%  
(Ta= -40 to +105°C) ±2.0%  
Precision Reference voltage  
Max Output Current:  
Operating Temperature:  
3.5A(Max)  
-40°C to +105°C  
Package W (Typ) x D (Typ) x H (Max)  
HTSOP-J8ES  
4.90mm x 6.00mm x 1.00mm  
Features  
AEC-Q100 Qualified(Note 1)  
Integrated Nch MOSFET  
Synchronizes to external clock 250kHz to 500kHz  
ON/OFF Control through EN Terminal  
(Standby current of 0µA)  
Small package(HTSOP-J8ES)  
LowDrop Out operation  
(Note1: Grade 2)  
HTSOP-J8ES  
Applications  
Consumer devices in general that has 12V / 24V lines  
Automotive applications  
(Audio system, Navigation system, etc)  
Industrial distributed-power applications  
Entertainment equipment  
Typical Application Circuit  
0.1µF  
5V / 3.5A  
L1: 22µH  
LX  
VOUT  
VCC  
VCC  
COUT  
: 47µF / 16V  
CVCC  
: 10µF / 50V  
D1  
BST  
EN  
GND  
VC  
R4  
R5  
EN  
160kΩ  
0.01μF  
SYNC  
FB  
SYNC  
4.7kΩ  
30kΩ  
Figure 1. Typical Application Circuit  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0252AAP00020-1-2  
29.Mar.2022 Rev.003  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/28  
TSZ2211114001  

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