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BD81870EFV-ME2 PDF预览

BD81870EFV-ME2

更新时间: 2024-11-12 01:15:59
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
36页 2238K
描述
Step-up / Inverted 2ch Switching Regulator

BD81870EFV-ME2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:11 weeks风险等级:1.65
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BD81870EFV-ME2 数据手册

 浏览型号BD81870EFV-ME2的Datasheet PDF文件第2页浏览型号BD81870EFV-ME2的Datasheet PDF文件第3页浏览型号BD81870EFV-ME2的Datasheet PDF文件第4页浏览型号BD81870EFV-ME2的Datasheet PDF文件第5页浏览型号BD81870EFV-ME2的Datasheet PDF文件第6页浏览型号BD81870EFV-ME2的Datasheet PDF文件第7页 
Datasheet  
Single-chip Type with Built-in FET Switching Regulator Series  
Step-up / Inverted 2ch  
Switching Regulator  
BD81870EFV-M  
General Description  
Special Characteristics  
BD81870EFV is current mode step-up and inverted 2  
channel switching regulator with built in FET.  
Reference Accuracy  
Switching Frequency±14.3%(Ta=-40 to 105°C)  
±3%(Ta=-40 to 105°C)  
Key Specification  
Features  
Input voltage range:  
Step-up Output voltage range:  
2.5V to 5.5V  
AEC-Q100 Qualified(Note 1)  
Wide input voltage range 2.5V to 5.5V  
High Frequency 2.1MHz  
Built-in 300mΩ/22V Nch FET and 300mΩ/15.5V Pch  
FET.  
VDD x 1.24 to 18.0V  
Inverted Output voltage range:  
VDD - 13.0V to -1.0V  
Switching Frequency:  
Nch FET ON resistance:  
Pch FET ON resistance:  
2.1MHz(Typ.)  
300mΩ(Typ.)  
300mΩ(Typ.)  
Built-in 150mΩ high-side switch for boost channel  
with soft-start function  
Independent ON/OFF signal, Built-in discharge switch  
Circuits protectionOCP, SCP, OVP, UVLO, TSD  
(Note 1:Grade2)  
Operating Temperature range-40to +105℃  
Package  
W (Typ.) x D (Typ.) x H (Max.)  
6.5mm x 6.4mm x 1.00mm  
HTSSOP-B20  
Applications  
Car navigation panel, Car instrument panel  
HTSSOP-B20  
Typical Application Circuit  
TOP VIEW)  
VDD  
VOUT1  
VDDP  
VDDP  
VDDP  
HS2L  
LX2  
LX1  
DIS1  
NON1  
VREF  
N.C.  
VOUT2  
BD81870  
GNDP  
VOUT2  
DIS2  
HSWON  
SEQON  
STB1  
STB2  
VDDA  
(HTSSOP-B20)  
GNDA  
VDD  
INV2  
Figure 1. Application Circuit  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
TSZ02201-0313AAF00650-1-2  
29.July.2016 Rev.001  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/32  
TSZ22111 14 001  
 
 
 
 
 
 
 

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