Datasheet > BD7LS32G-C

BD7LS32G-C

更新时间： 2023-09-03 20:25:24

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	1352K
描述
BD7LS32G-C是适用于车载应用的Single 2-input OR gate。可保证在1.65V到5.5V的电源电压下工作。具备output tolerant电路，可在断电时防止电流从连接对象流入，保护输出电路。

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BD7LS32G-C 数据手册

BD7LS32G-C

Operational Notes – continued

11. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep

them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements,

creating a parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these

Resistor

Transistor (NPN)

Pin A

Pin B

Pin A

P⁺

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P

substrate) should be avoided.

Example of Monolithic IC Structure

12. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

.www.rohm.com

TSZ02201-0G4G0GZ00050-1-2

7/10

TSZ22111 • 15• 001

21.Apr.2020 Rev.001

1...4 5 678 9 10...13

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