BD787 − NPN, BD788 − PNP
10
There are two limitations on the power handling ability of
100 ms
500 ms
1.0 ms
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
5.0
C
CE
5.0 ms
T = 150°C
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
2.0
dc
J
1.0
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25°C
ꢀ(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C: T is
J(pk)
C
C
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
0.05
v 150_C,
T
may be calculated from the data in
J(pk)
CURVES APPLY BELOW RATED V
CEO
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
BD787 (NPN) BD788 (PNP)
60 V
50 70 100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0 7.0 10
20 30
V
CE
Figure 5. Active Region Safe Operating Area
200
2000
1000
V
I /I = 10
= 30 V
T = 25°C
J
CC
t
s
C B
100
I
= I
700
500
B1 B2
C
ib
T = 25°C
J
70
50
300
200
t
30
20
f
C
100
70
ob
50
(NPN)
(PNP)
(NPN)
(PNP)
30
20
10
1.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (AMP)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn−Off Time
Figure 7. Capacitance
NPN
BD787
NPN
BD788
400
200
300
V
V
= 1.0 V
= 3.0 V
V
V
= 1.0 V
= 3.0 V
CE
CE
CE
CE
T = 150°C
J
T = 150°C
J
100
70
200
25°C
25°C
−ꢁ55°C
100
70
50
−ꢁ55°C
30
20
50
30
20
10
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
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