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BD788G PDF预览

BD788G

更新时间: 2024-02-26 21:17:17
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 79K
描述
Complementary Plastic Silicon Power Transistors

BD788G 数据手册

 浏览型号BD788G的Datasheet PDF文件第1页浏览型号BD788G的Datasheet PDF文件第2页浏览型号BD788G的Datasheet PDF文件第3页浏览型号BD788G的Datasheet PDF文件第5页浏览型号BD788G的Datasheet PDF文件第6页 
BD787 − NPN, BD788 − PNP  
10  
There are two limitations on the power handling ability of  
100 ms  
500 ms  
1.0 ms  
a transistor: average junction temperature and second  
breakdown. Safe operating area curves indicate I − V  
5.0  
C
CE  
5.0 ms  
T = 150°C  
limits of the transistor that must be observed for reliable  
operation, i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
2.0  
dc  
J
1.0  
0.5  
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
ꢀ(SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
The data of Figure 5 is based on T  
variable depending on conditions. Second breakdown pulse  
= 150_C: T is  
J(pk)  
C
C
0.1  
limits are valid for duty cycles to 10% provided T  
J(pk)  
0.05  
v 150_C,  
T
may be calculated from the data in  
J(pk)  
CURVES APPLY BELOW RATED V  
CEO  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
0.02  
0.01  
BD787 (NPN) BD788 (PNP)  
60 V  
50 70 100  
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
V
CE  
Figure 5. Active Region Safe Operating Area  
200  
2000  
1000  
V
I /I = 10  
= 30 V  
T = 25°C  
J
CC  
t
s
C B  
100  
I
= I  
700  
500  
B1 B2  
C
ib  
T = 25°C  
J
70  
50  
300  
200  
t
30  
20  
f
C
100  
70  
ob  
50  
(NPN)  
(PNP)  
(NPN)  
(PNP)  
30  
20  
10  
1.0  
0.04 0.06 0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
I , COLLECTOR CURRENT (AMP)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Turn−Off Time  
Figure 7. Capacitance  
NPN  
BD787  
NPN  
BD788  
400  
200  
300  
V
V
= 1.0 V  
= 3.0 V  
V
V
= 1.0 V  
= 3.0 V  
CE  
CE  
CE  
CE  
T = 150°C  
J
T = 150°C  
J
100  
70  
200  
25°C  
25°C  
−ꢁ55°C  
100  
70  
50  
−ꢁ55°C  
30  
20  
50  
30  
20  
10  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
I , COLLECTOR CURRENT (AMP)  
C
I , COLLECTOR CURRENT (AMP)  
C
Figure 8. DC Current Gain  
http://onsemi.com  
4
 

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