Datasheet
Single-Output LDO Regulators
Ultra Low Quiescent Current LDO
Regulator
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●General Description
●Key specification
The BD7xxL2EFJ-C, BD7xxU2EFJ-C,
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Ultra low quiescent current:
Output voltage:
6μA (Typ)
3.3 V or 5.0 V (Typ)
200mA
BD7xxL2FP-C, BD7xxL2FP3-C are low quiescent
regulators featuring 50V absolute maximum voltage,
and output voltage accuracy of ±2%, 200mA output
current and 6μA (Typ) current consumption. These
regulators are therefore ideal for applications
requiring a direct connection to the battery and a
low current consumption. Ceramic capacitors can
be used for compensation of the output capacitor
phase. Furthermore, these ICs also feature
overcurrent protection to protect the device from
damage caused by short-circuiting and an
integrated thermal shutdown to protect the device
from overheating at overload conditions.
Output current capability:
High output voltage accuracy:
Low ESR ceramic capacitor
can be used as output capacitor
AEC-Q100 Qualified(*2)
(*2:Grade1)
±2%
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●Packages
W (Typ) x D (Typ) x H (Max)
4.90mm x 6.00mm x 1.00mm
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EFJ: HTSOP-J8
●Features
FP: TO252-3
6.50mm x 9.50mm x 2.50mm
6.53mm x 7.00mm x 1.80mm
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Ultra low quiescent current: 6μA (Typ)
Output current capability: 200mA
Output voltage: 3.3 V or 5.0 V (Typ)
High output voltage accuracy: ±2%
Low saturation voltage by using PMOS output
transistor.
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Integrated overcurrent protection to protect the
IC from damage caused by output
short-circuiting.
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FP3:SOT223-4(F)
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Integrated thermal shutdown to protect the IC
from overheating at overload conditions.
Low ESR ceramic capacitor can be used as
output capacitor.
HTSOP-J8, TO252-3, SOT223-4(F) (*1)
3type package
Figure 1. Package Outlook
(*1:SOT223-4, SOT223-4F)
●Applications
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Automotive (body, audio system, navigation system, etc.)
●Typical Application Circuits
◼ Components externally connected: 0.1 µF ≤ CIN, 4.7 µF ≤ COUT (Min)
*Electrolytic, tantalum and ceramic capacitors can be used.
FIN
FIN
8:VCC
7:N.C
6:N.C 5:GND
BD7xxL2FP3-C
2:N.C
BD7xxL2EFJ-C
BD7xxU2EFJ-C
BD7xxL2FP-C
CIN
1:VCC
3:VOUT
1:VCC
2:N.C
3:VOUT
1
1
1:VOUT 2:N.C
3:N.C
4:N.C
CIN
COUT
CIN
COUT
COUT
HTSOP-J8
TO252-3
SOT223-4(F)
Figure 2. Typical Application Circuits
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
.
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