Datasheet > BD535J

BD535J

更新时间： 2024-11-14 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	41K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 8A I(C) \| TO-220AB

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BD535J 数据手册

BD533/535/537

Medium Power Linear and Switching

Applications

•

Low Saturation Voltage

Complement to BD534, BD536 and BD538 respectively

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

: BD533

: BD535

: BD537

CBO

CES

CEO

EBO

: BD533

: BD535

: BD537

: BD533

: BD535

: BD537

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector Cut-off Current : BD533

= 45V, I = 0

100

µA

CBO

CES

EBO

: BD535

: BD537

= 60V, I = 0

= 80V, I = 0

Collector Cut-off Current : BD533

= 45V, V = 0

100

µA

: BD535

: BD537

= 60V, V = 0

= 80V, V = 0

Emitter Cut-off Current

= 5V, I = 0

* DC Current Gain

: BD533/535

= 5V, I = 10mA

: BD537

: ALL DEVICE

: BD533/535

: BD537

= 2V, I = 500mA

= 2V, I = 2A

Groups

: ALL DEVICE

(sat) * Collector-Emitter Saturation Voltage

= 2V, I = 2A

= 2V, I = 3A

= 2V, I = 2A

100

= 2V, I = 3A

= 2A, I = 0.2A

0.8

1.5

= 6A, I = 0.6A

0.8

(on)

* Base-Emitter ON Voltage

= 2V, I = 2A

Current Gain Bandwidth Product

= 1V, I = 500mA

MHz

* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed

Rev. A, February 2000

12 3 4

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