5秒后页面跳转
BD535J69Z PDF预览

BD535J69Z

更新时间: 2024-11-15 15:28:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 69K
描述
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BD535J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72最大集电极电流 (IC):8 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):12 MHzBase Number Matches:1

BD535J69Z 数据手册

 浏览型号BD535J69Z的Datasheet PDF文件第2页浏览型号BD535J69Z的Datasheet PDF文件第3页 

与BD535J69Z相关器件

型号 品牌 获取价格 描述 数据表
BD535J-DR6259 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD535J-DR6260 RENESAS

获取价格

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD535J-DR6269 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD535J-DR6274 RENESAS

获取价格

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD535J-DR6280 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD535JJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD535K FAIRCHILD

获取价格

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD535K-6200 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD535K-6203 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD535K-6226 RENESAS

获取价格

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB