Datasheet > BD52E31G-M

BD52E31G-M

更新时间： 2024-10-31 11:08:11

品牌	Logo	应用领域
罗姆 - ROHM		电容器
页数	文件大小	规格书
15页	1273K
描述
罗姆的延迟时间自由设置型CMOS复位IC系列，是内置了采用CMOS工艺的高精度、低消耗电流的延迟电路的CMOS RESET IC系列。可通过外接电容器设定延迟时间。为保证客户可根据应用进行选择，备有Nch漏极开路输出(BD52Exxx-M)系列和CMOS输出(BD53Exxx-M)系列产品。备有检测电压为2.3V～6.0V的0.1V阶跃的产品阵容。

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BD52E31G-M 数据手册

Datasheet

Voltage Detector IC Series for Automotive

Free Delay Time Setting

CMOS Voltage Detector IC Series

BD52Exxx-M series BD53Exxx-M series

●General Description

●Key Specifications

 Detection voltage:

Rohm's BD52Exxx and BD53Exxx series are highly

accurate, low current consumption Voltage Detector

ICs with a capacitor controlled time delay. The line up

includes BD52Exxx devices with N-channel open drain

output and BD53Exxx devices with CMOS output. The

devices are available for specific detection voltages

ranging from 2.3V to 6.0V in increments of 0.1V.

●Features

2.3V to 6.0V (Typ.)

0.1V steps

 High accuracy detection voltage:

 Ultra-low current consumption:

●Package

±1.0%

0.95µA (Typ.)

SSOP5:

2.90mm x 2.80mm x 1.25mm

●Applications

Circuits using microcontrollers or logic circuits that

require reset for automotive applications (car

navigation, car audio, meter panel, exterior lamp etc.)

 Delay Time Controlled by external Capacitor

 Two output types(N-channel open drain and CMOS

output)

 Ultra-low current consumption

 Very small, lightweight and thin package

 Package SSOP5 is similar to SOT-23-5(JEDEC)

 AEC-Q100 Qualified

●Typical Application Circuit

VDD1

VDD2

Micro

controller

RST

BD53Exxx-M

Micro

controller

RST

BD52Exxx-M

(Capacitor for

noise filtering)

(Capacitor for

noise filtering)

GND

Open Drain Output type

BD52Exxx-M Series

CMOS Output type

BD53Exxx-M Series

●Connection Diagram

SSOP5

N.C.

TOP VIEW

Lot. No

Marking

VOUT VDD GND

●Pin Descriptions

SSOP5

PIN No. Symbol

Function

VOUT

VDD

Reset Output

Power Supply Voltage

GND

N.C.

Unconnected Terminal

Capacitor connection terminal for

output delay time

C_T

○Product structure：Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays

.www.rohm.com

TSZ02201-0R7R0G300090-1-2

17.Jun.2020 Rev.006

1/12

TSZ22111・14・001

12 3 4 5 6 7...15

中文翻译

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与BD52E31G-M相关器件

型号	品牌	获取价格	描述	数据表
BD52E32	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E32G	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E32G-M	ROHM	获取价格	罗姆的延迟时间自由设置型CMOS复位IC系列，是内置了采用CMOS工艺的高精度、低消耗电流
BD52E33	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E33G	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E33G-M	ROHM	获取价格	罗姆的延迟时间自由设置型CMOS复位IC系列，是内置了采用CMOS工艺的高精度、低消耗电流
BD52E34	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E34G	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series
BD52E34G-M	ROHM	获取价格	罗姆的延迟时间自由设置型CMOS复位IC系列，是内置了采用CMOS工艺的高精度、低消耗电流
BD52E35	ROHM	获取价格	Free Delay Time Setting CMOS Voltage Detector IC Series

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