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BD5240G-1 PDF预览

BD5240G-1

更新时间: 2024-11-06 15:17:51
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
22页 1467K
描述
ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low curre

BD5240G-1 数据手册

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Nano EnergyTM  
Datasheet  
Voltage Detector (Reset) IC Series  
Free Time Delay Setting  
CMOS Voltage Detector (Reset) IC  
BD52xxG-1 Series  
General Description  
Key Specifications  
ROHM's Free Time Delay Setting CMOS Voltage  
Detector ICs are highly accurate, with ultra-low current  
consumption feature that uses CMOS process. Delay  
time setting can be control by an external capacitor. The  
lineup includes N-channel open drain output  
(BD52xxG-1). The devices are available for specific  
detection voltage ranging from 0.9 V to 5.0 V with 0.1 V  
increment. The time delay has ±30 % accuracy in the  
overall operating temperature range of -40 °C to 85 °C.  
Detection Voltage Accuracy:  
±1.0 % ±5 mV (VDET = 0.9 V to 1.6 V)  
±0.9 % (VDET = 1.7 V to 5.0 V)  
Detection Voltage:  
0.9 V to 5.0 V (Typ)  
0.1 V step  
Ultra-Low Current Consumption:  
270 nA (Typ)  
Time Delay Accuracy:  
±30 % (-40 °C to +85 °C,  
CT pin capacitor ≥ 1 nF)  
Features  
Package  
W(Typ) x D(Typ) x H(Max)  
2.90 mm x 2.80 mm x 1.25 mm  
Nano Energy™  
SSOP5:  
Delay Time Setting Controlled by External Capacitor  
Nch Open Drain Output Type  
Very Small, Lightweight and Thin Package  
Package SSOP5 is similar to SOT-23-5 (JEDEC)  
Application  
All consumer devices that requires voltage detection  
Typical Application Circuit  
VDD1  
VDD2  
RL  
Microcontroller  
RST  
CVDD  
BD52xxG-1  
CCT  
(Noise-reduction  
Capacitor)  
CL  
GND  
Figure 1. Open Drain Output Type  
BD52xxG-1 Series  
Pin Configuration  
Pin Description  
SSOP5  
SSOP5  
TOP VIEW  
PIN No. PIN Name  
Function  
Output pin  
1
2
3
4
VOUT  
VDD  
GND  
N.C.  
CT  
N.C.  
Power supply voltage  
GND  
No connection pin  
Capacitor connection pin for  
output delay time setting  
5
CT  
N.C. pin is electrically open and can  
be connected to either VDD or GND.  
VOUT VDD GND  
Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd.  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
© 2018 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0GBG2G600060-1-2  
18.May.2023 Rev.002  
1/19  

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