Datasheet
Voltage Detector IC Series
Counter Timer Built-in
CMOS Voltage Detector IC
BD45Exxxx-M series BD46Exxxx-M series (AEC-Q100 Qualified)
●Key Specifications
●General Description
ꢀ Detection voltage:
2.3V to 4.8V (Typ.)
0.1V steps
±1.0%
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are
highly accurate, low current consumption Voltage
ꢀ High accuracy detection voltage:
Detector IC series. Because the counter timer delay
circuit is built into those series, an external capacitor for
the delay time setting is unnecessary. The lineup was
established with two output types (Nch open drain and
CMOS output) and detection voltages range from 2.3V
to 4.8V in increments of 0.1V, so that the series may be
selected according to application.
ꢀ Ultra-low current consumption:
ꢀ Operating temperature range:
ꢀ Three internal, fixed delay time:
0.85µA (Typ.)
-40°C to +105°C
50ms
100ms
200ms
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Features
ꢀ Counter Timer Built-in
ꢀ No delay time setting capacitor required
ꢀ Ultra-low current consumption
●Applications
Circuits using microcontrollers or logic circuits that require
a reset.
ꢀ Two output types (Nch open drain and CMOS output)
ꢀ Package SSOP5 is similar to SOT-23-5 (JEDEC)
●Typical Application Circuit
VDD1
VDD1
VDD2
RL
Micro
controller
Micro
controller
BD46Exxxx-M
RST
BD45Exxxx-M
RST
CL
CL
(Noise-filtering
Capacitor)
(Noise-filtering
Capacitor)
GND
GND
(Open Drain Output Type)
(CMOS Output Type)
BD46Exxxx-M series
BD45Exxxx-M series
●Connection Diagram
●Pin Descriptions
SSOP5
VDD
VOUT
PIN No.
Symbol
ER
Function
1
2
3
4
5
Manual Reset
Substrate *
SUB
GND
VOUT
VDD
GND
TOP VIEW
Reset Output
Power Supply Voltage
Lot. No
Marking
ER SUB GND
*Connect the substrate to GND.
○Product structure:Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays
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TSZ02201-0R7R0G300110-1-2
23.May.2013 Rev.003
© 2013 ROHM Co., Ltd. All rights reserved.
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