Datasheet > BD45E231-TR

BD45E231-TR

更新时间： 2024-09-14 00:18:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
18页	1437K
描述
Counter Timer Built-in CMOS Voltage Detector IC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD45E231-TR 数据手册

Datasheet

Voltage Detector IC Series for Automotive

Counter Timer Built-in

CMOS Voltage Detector IC

BD45Exxxx-M series BD46Exxxx-M series

●Key Specifications

 Detection voltage:

●General Description

2.3V to 4.8V (Typ.)

0.1V steps

±1.0%

ROHM’s BD45Exxxx-M and BD46Exxxx-M series are

highly accurate, low current consumption Voltage

Detector IC series. Because the counter timer delay

circuit is built into those series, an external capacitor for

the delay time setting is unnecessary. The lineup was

established with two output types (Nch open drain and

CMOS output) and detection voltages range from 2.3V

to 4.8V in increments of 0.1V, so that the series may be

selected according to application.

 High accuracy detection voltage:

 Ultra-low current consumption:

 Operating temperature range:

 Three internal, fixed delay time:

0.85µA (Typ.)

-40°C to +105°C

50ms

100ms

200ms

●Package

SSOP5

2.90mm x 2.80mm x 1.25mm

●Features

 Counter Timer Built-in

 No delay time setting capacitor required

 Ultra-low current consumption

●Applications

Circuits using microcontrollers or logic circuits that

require reset for automotive applications (car

navigation, car audio, meter panel, exterior lamp etc.)

 Two output types (Nch open drain and CMOS output)

 Package SSOP5 is similar to SOT-23-5 (JEDEC)

 AEC-Q100 Qualified

●Typical Application Circuit

VDD1

VDD2

Micro

controller

BD46Exxxx-M

RST

Micro

controller

BD45Exxxx-M

RST

（Noise-filtering

Capacitor）

（Noise-filtering

Capacitor）

GND

（CMOS Output Type）

（Open Drain Output Type）

BD46Exxxx-M series

BD45Exxxx-M series

●Connection Diagram

●Pin Descriptions

SSOP5

VDD

VOUT

PIN No.

Symbol

Function

Manual Reset

Substrate *

SUB

GND

VOUT

VDD

GND

TOP VIEW

Reset Output

Power Supply Voltage

Lot. No

Marking

ER SUB GND

*Connect the substrate to GND.

○Product structure：Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays

.www.rohm.com

TSZ02201-0R7R0G300110-1-2

27.Aug.2013 Rev.004

1/14

TSZ22111・14・001

12 3 4 5 6 7...18

中文翻译

下载PDF

与BD45E231-TR相关器件

型号	品牌	获取价格	描述	数据表
BD45E232	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E232G-M	ROHM	获取价格	罗姆的BD45Exxxx-M、BD46Exxxx-M系列，是采用了CMOS工艺的高精度、低
BD45E232G-MTR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E232-M	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E232-TR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E235	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E235G-M	ROHM	获取价格	罗姆的BD45Exxxx-M、BD46Exxxx-M系列，是采用了CMOS工艺的高精度、低
BD45E235G-MTR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E235-M	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E235-TR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC