Datasheet > BD45E251-TR

BD45E251-TR

更新时间： 2024-11-06 00:18:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
18页	1437K
描述
Counter Timer Built-in CMOS Voltage Detector IC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD45E251-TR 数据手册

Datasheet

Voltage Detector IC Series for Automotive

Counter Timer Built-in

CMOS Voltage Detector IC

BD45Exxxx-M series BD46Exxxx-M series

●Key Specifications

 Detection voltage:

●General Description

2.3V to 4.8V (Typ.)

0.1V steps

±1.0%

ROHM’s BD45Exxxx-M and BD46Exxxx-M series are

highly accurate, low current consumption Voltage

Detector IC series. Because the counter timer delay

circuit is built into those series, an external capacitor for

the delay time setting is unnecessary. The lineup was

established with two output types (Nch open drain and

CMOS output) and detection voltages range from 2.3V

to 4.8V in increments of 0.1V, so that the series may be

selected according to application.

 High accuracy detection voltage:

 Ultra-low current consumption:

 Operating temperature range:

 Three internal, fixed delay time:

0.85µA (Typ.)

-40°C to +105°C

50ms

100ms

200ms

●Package

SSOP5

2.90mm x 2.80mm x 1.25mm

●Features

 Counter Timer Built-in

 No delay time setting capacitor required

 Ultra-low current consumption

●Applications

Circuits using microcontrollers or logic circuits that

require reset for automotive applications (car

navigation, car audio, meter panel, exterior lamp etc.)

 Two output types (Nch open drain and CMOS output)

 Package SSOP5 is similar to SOT-23-5 (JEDEC)

 AEC-Q100 Qualified

●Typical Application Circuit

VDD1

VDD2

Micro

controller

BD46Exxxx-M

RST

Micro

controller

BD45Exxxx-M

RST

（Noise-filtering

Capacitor）

（Noise-filtering

Capacitor）

GND

（CMOS Output Type）

（Open Drain Output Type）

BD46Exxxx-M series

BD45Exxxx-M series

●Connection Diagram

●Pin Descriptions

SSOP5

VDD

VOUT

PIN No.

Symbol

Function

Manual Reset

Substrate *

SUB

GND

VOUT

VDD

GND

TOP VIEW

Reset Output

Power Supply Voltage

Lot. No

Marking

ER SUB GND

*Connect the substrate to GND.

○Product structure：Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays

.www.rohm.com

TSZ02201-0R7R0G300110-1-2

27.Aug.2013 Rev.004

1/14

TSZ22111・14・001

12 3 4 5 6 7...18

中文翻译

下载PDF

与BD45E251-TR相关器件

型号	品牌	获取价格	描述	数据表
BD45E252	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E252G-M	ROHM	获取价格	罗姆的BD45Exxxx-M、BD46Exxxx-M系列，是采用了CMOS工艺的高精度、低
BD45E252-M	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E252-TR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E255	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E255G-M	ROHM	获取价格	罗姆的BD45Exxxx-M、BD46Exxxx-M系列，是采用了CMOS工艺的高精度、低
BD45E255G-MTR	ROHM	获取价格	Power Supply Support Circuit, Fixed, 1 Channel, +2.5VV, CMOS, PDSO5, 2.90 X 2.80 MM, 1.25M
BD45E255-M	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E255-TR	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC
BD45E261	ROHM	获取价格	Counter Timer Built-in CMOS Voltage Detector IC

与BD45E251-TR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

BD45E251-TR

BD45E251-TR 数据手册

与BD45E251-TR相关器件

与BD45E251-TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BD45E251-TR

BD45E251-TR 数据手册

与BD45E251-TR相关器件

与BD45E251-TR相关文章

您还可以找

您在本页遇到什么问题？