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BD45E251-TR PDF预览

BD45E251-TR

更新时间: 2024-11-05 00:18:15
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
18页 1437K
描述
Counter Timer Built-in CMOS Voltage Detector IC

BD45E251-TR 数据手册

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Datasheet  
Voltage Detector IC Series for Automotive  
Counter Timer Built-in  
CMOS Voltage Detector IC  
BD45Exxxx-M series BD46Exxxx-M series  
Key Specifications  
Detection voltage:  
General Description  
2.3V to 4.8V (Typ.)  
0.1V steps  
±1.0%  
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are  
highly accurate, low current consumption Voltage  
Detector IC series. Because the counter timer delay  
circuit is built into those series, an external capacitor for  
the delay time setting is unnecessary. The lineup was  
established with two output types (Nch open drain and  
CMOS output) and detection voltages range from 2.3V  
to 4.8V in increments of 0.1V, so that the series may be  
selected according to application.  
High accuracy detection voltage:  
Ultra-low current consumption:  
Operating temperature range:  
Three internal, fixed delay time:  
0.85µA (Typ.)  
-40°C to +105°C  
50ms  
100ms  
200ms  
Package  
SSOP5  
2.90mm x 2.80mm x 1.25mm  
Features  
Counter Timer Built-in  
No delay time setting capacitor required  
Ultra-low current consumption  
Applications  
Circuits using microcontrollers or logic circuits that  
require reset for automotive applications (car  
navigation, car audio, meter panel, exterior lamp etc.)  
Two output types (Nch open drain and CMOS output)  
Package SSOP5 is similar to SOT-23-5 (JEDEC)  
AEC-Q100 Qualified  
a
Typical Application Circuit  
VDD1  
VDD1  
VDD2  
RL  
Micro  
controller  
BD46Exxxx-M  
RST  
Micro  
controller  
BD45Exxxx-M  
RST  
CL  
CL  
Noise-filtering  
Capacitor)  
Noise-filtering  
Capacitor)  
GND  
GND  
CMOS Output Type)  
Open Drain Output Type)  
BD46Exxxx-M series  
BD45Exxxx-M series  
Connection Diagram  
Pin Descriptions  
SSOP5  
VDD  
VOUT  
PIN No.  
Symbol  
ER  
Function  
1
2
3
4
5
Manual Reset  
Substrate *  
SUB  
GND  
VOUT  
VDD  
GND  
Reset Output  
Power Supply Voltage  
Lot. No  
Marking  
ER SUB GND  
*Connect the substrate to GND.  
Product structureSilicon monolithic integrated circuit This product is not designed for protection against radioactive rays  
.www.rohm.com  
TSZ02201-0R7R0G300110-1-2  
27.Aug.2013 Rev.004  
© 2013 ROHM Co., Ltd. All rights reserved.  
1/14  
TSZ2211114001  

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