Datasheet > BD3506F_10

BD3506F_10

更新时间： 2024-11-25 08:51:19

品牌	Logo	应用领域
罗姆 - ROHM		PC
页数	文件大小	规格书
15页	524K
描述
Nch FET Ultra LDO for PC Chipsets

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中文翻译

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数据手册

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BD3506F_10 数据手册

High Performance Regulators for PCs

Nch FET Ultra LDO

for PC Chipsets

BD3506F,BD3506EFV

No.10030EAT30

Description

The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low

voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage

difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage

difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can

be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required

for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using

external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be

adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.

Features

1) Built-in high-accuracy reference voltage circuit (0.65V±1%)

2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)

3) Reduced rush current by NRCS

4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)

5) Built-in current limiting circuit (2.5A min)

6) Built-in thermal shutdown circuit

7) Output variable type (0.65-2.5V)

8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)

9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)

Applications

Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances

●Line up

Parameter

BD3506F

120mꢀ

2.5A

BD3506EFV

100mꢀ

Ron

Output Current

Package

2.5A

SOP8

HTSSOP-B20

●Absolute Maximum Ratings(Ta=25℃)

Ratings

BD3506EFV

Parameter

Symbol

Unit

BD3506F

7 *¹

Input Voltage1

VCC

VIN

7 *¹

Input Voltage2

7 *¹

Enable Input Voltage

Power Dissipation1

Power Dissipation2

Operating Temperature Range

Storage Temperature Range

Ven

Pd1

560 *²

690 *³

-10～+100

-55～+125

+150

℃

Pd2

1000 *⁴

-10～+100

-55～+125

+150

Topr

Tstg

Tjmax

℃

Maximum Junction Temperature

℃

*1 However, not exceeding Pd.

*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.

*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.

*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.

www.rohm.com

2010.05 - Rev.A

1/14

12 3 4 5 6 7...15

中文翻译

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与BD3506F_10相关器件

型号	品牌	获取价格	描述	数据表
BD3506F-E1	ROHM	获取价格	Regulator, 1 Output, CMOS, PDSO8,
BD3506G	WTE	获取价格	Rectifier Diode,
BD3506G	WON-TOP	获取价格	Pressfit Diodes
BD3506G-LF	WTE	获取价格	Rectifier Diode,
BD3506GR	WTE	获取价格	Rectifier Diode,
BD3506-LF	WTE	获取价格	暂无描述
BD3506R	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, PRESSFIT-1
BD3506R-LF	WTE	获取价格	暂无描述
BD3507HFV	ROHM	获取价格	1ch Series Regulator Driver IC
BD3507HFV_08	ROHM	获取价格	Ultra Low Dropout Linear Regulators for PC Chipsets

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