Datasheet > BD3507HFV_10

BD3507HFV_10

更新时间： 2024-09-23 08:51:19

品牌	Logo	应用领域
罗姆 - ROHM		PC
页数	文件大小	规格书
16页	467K
描述
Nch FET Ultra LDO for PC Chipsets

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中文翻译

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数据手册

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BD3507HFV_10 数据手册

High Performance Regulators for PCs

Nch FET Ultra LDO

for PC Chipsets

BD3507HFV

No.10030EAT31

●Description

The BD3507HFV is suited for power supply for chipset bus. Though small in size, BD3507HFV adopts power PKG with

radiation fins, and it therefore can be used for a regulator up to 550mA. Because it adopts Nch MOSFET and can form a

ultra LDO power supply of R_ON=300mΩ (TYP), BD3507HFV can compose a high-efficiency system, though it is of a linear

type power supply. The output voltage can be set by VREF terminal and can be synchronized with other power supply.

In addition, it can be used as a high side switch (R_ON= 300mΩ/lo = 550mA) of low-voltage power supply line.

Because ceramic capacitors can be used for output capacitors, BD3507HFV contributes to downsizing and reduced

thickness not only of IC but also of sets.

●Features

1) Built-in high-accuracy buffer circuit (can be set to 0.65-2.7V)

2) Adoption of ceramic capacitors

3) Built-in enable function (0μA at standby)

4) Built-in current limiting circuit (550mA Max)

5) Built-in under voltage lockout circuit (UVLO)

6) Built-in thermal shutdown circuit (TSD)

7) Adoption of ultra-small-size high-power HVSOF6 package (3.0 x 1.6 x 0.75 mm)

●Applications

Notebook PC, desktop PC, digital camera, digital home appliances

●Absolute Maximum Ratings (Ta=25℃)

Parameter

Input Voltage1

Symbol

V_CC

Ratings

6.0 ^{*1 *2}

Unit

Input Voltage2

V_IN

Enable Input Voltage

Power Dissipation1

V_EN

6.0 ^{*1 *2}

Pd1

512.5 ^*3

850.0 ^*4

-10～+100

-55～+150

+150

℃

Power Dissipation2

Pd2

Operating Temperature Range

Storage Temperature Range

Topr

Tstg

Tjmax

℃

Maximum Junction Temperature

℃

*1 However, not exceeding Pd.

*2 Maximum rating that can stand instantaneous voltage application such as surge, back EMF, or continuous pulse application whose duty ratio lowers 10%.

*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 4.1 mW/°C.

*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate (copper foil area: 100 mm²)), derated at 6.8 mW/°C.

●Operating Conditions (Ta=25℃)

Ratings

Parameter

Symbol

Unit

MIN

4.5

1.2

0.65

-0.3

MAX

5.5

Input Voltage1

V_CC

V_IN

Input Voltage2

Vcc-1

2.7

VREF Setup Voltage

EN Input Voltage

Output Current

V_REF

V_EN

I_O

5.5

550

★ No radiation-resistant design is adopted for the present product.

www.rohm.com

2010.05 - Rev.A

1/15

12 3 4 5 6 7...16

中文翻译

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与BD3507HFV_10相关器件

型号	品牌	获取价格	描述	数据表
BD3507HFV-TL	ROHM	获取价格	暂无描述
BD3508EKN	ROHM	获取价格	Silicon monolithic integrated circuit 1ch Series Regulator Driver IC
BD3508EKN-E2	ROHM	获取价格	Adjustable Positive LDO Regulator, 0.65V Min, 2.7V Max, 4.20 X 4.20 MM, 0.90 MM HEIGHT, RO
BD3508MUV	ROHM	获取价格	Ultra Low Dropout Linear Regulators for PC Chipsets
BD3508MUV_09	ROHM	获取价格	Ultra Low Dropout Linear Regulators for PC Chipsets
BD3508MUV-E1	ROHM	获取价格	Regulator, 1 Output, CMOS, PQCC20,
BD3508MUV-E2	ROHM	获取价格	Fixed Positive Standard Regulator, CMOS, 4 X 4 MM, 1 MM HEIGHT, VQFN-20
BD3509MUV	ROHM	获取价格	Silicon monolithic integrated circuit 1ch Series Regulator Driver IC
BD3509MUV_10	ROHM	获取价格	Nch FET Ultra LDO for PC Chipsets
BD3509MUV-TL	ROHM	获取价格	暂无描述

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