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BD302 PDF预览

BD302

更新时间: 2024-11-13 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 224K
描述
Silicon PNP Power Transistor

BD302 数据手册

 浏览型号BD302的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD302  
DESCRIPTION  
·DC Current Gain -  
: hFE = 30(Min.)@ IC= -3A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -45V(Min.)  
·Complement to Type BD301  
APPLICATIONS  
·Designed for audio output stages up to 25W, vertical  
deflection circuits in color TV receivers.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-60  
UNIT  
V
-5  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
-8  
A
ICM  
-12  
A
IB  
-2  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
55  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
2.3  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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