Datasheet > BD302

BD302

更新时间： 2024-11-13 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	224K
描述
Silicon PNP Power Transistor

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中文翻译

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数据手册

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BD302 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD302

DESCRIPTION

·DC Current Gain -

: h_FE= 30(Min.)@ I_C= -3A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -45V(Min.)

·Complement to Type BD301

APPLICATIONS

·Designed for audio output stages up to 25W, vertical

deflection circuits in color TV receivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-60

UNIT

-45

-5

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-8

I_CM

-12

I_B

-2

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

2.3

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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