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BD277 PDF预览

BD277

更新时间: 2024-11-07 08:51:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 61K
描述
isc Silicon PNP Power Transistor

BD277 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.79

BD277 数据手册

 浏览型号BD277的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD277  
DESCRIPTION  
·Wide Area of Safe Operation  
·Low Saturation Voltage-  
·High Power Dissipation  
APPLICATIONS  
·Designed for use in series regulators and shunt regulators.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Base Current  
VALUE  
UNIT  
V
-45  
-45  
V
-4  
V
-7  
A
IB  
-3  
A
Collector Power Dissipation  
@ TC=25  
PC  
70  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.78  
70  
/W  
/W  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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