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BD242BBG

更新时间： 2024-11-16 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 94K
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BD242BBG 数据手册

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BD241C (NPN),  
BD242B (PNP),  
BD242C (PNP)  
BD241C and BD242C are Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Features  
•ꢀCollector-Emitter Saturation Voltage -  
CE  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
3 AMP  
•ꢀCollector-Emitter Sustaining Voltage -  
= 100 Vdc (Min) BD241C, BD242C  
80-100 VOLTS  
40 WATTS  
V
CEO(sus)  
•ꢀHigh Current Gain - Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
•ꢀCompact TO-220 AB Package  
MARKING  
DIAGRAM  
•ꢀEpoxy Meets UL94 V-0 @ 0.125 in  
•ꢀESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
TO-220AB  
CASE 221A-09  
STYLE 1  
•ꢀPb-Free Packages are Available*  
AYWW  
BD24xxG  
MAXIMUM RATINGS  
BD241C  
BD242C  
1
Rating  
Symbol  
BD242B  
Unit  
2
3
Collector-Emitter Voltage  
V
CEO  
80  
100  
Vdc  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
90  
115  
Vdc  
Vdc  
Adc  
CES  
BD24xx = Device Code  
xx = 1C, 2B, or 2C  
= Assembly Location  
V
5.0  
EB  
A
Collector Current  
Continuous  
Peak  
I
C
Y
= Year  
3.0  
5.0  
WW  
G
= Work Week  
= Pb-Free Package  
Base Current  
I
1.0  
40  
Adc  
W
B
Total Device Dissipation @  
P
D
T
= 25°C  
ORDERING INFORMATION  
C
Derate above 25°C  
0.32  
W/°C  
°C  
Device  
Package  
Shipping  
Operating and Storage  
Junction Temperature Range  
T , T  
–ꢁ65 to +ꢁ150  
J
stg  
BD241C  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
Characteristic  
BD241CG  
TO-220AB  
(Pb-Free)  
Symbol  
Max  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
R
62.5  
BD242B  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
q
JA  
JC  
R
q
3.125  
BD242BG  
TO-220AB  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BD242C  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
BD242CG  
TO-220AB  
(Pb-Free)  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 7  
1
Publication Order Number:  
BD241C/D  
123456

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 		Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD242B-DR6280 RENESAS

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