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BD242BBV PDF预览

BD242BBV

更新时间: 2024-02-28 22:46:52
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 363K
描述
TRANSISTOR 3 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BD242BBV 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector–Emitter Saturation Voltage —  
= 1.2 Vdc (Max) @ I = 3.0 Adc  
Collector–Emitter Sustaining Voltage —  
V
CE  
C
V
V
= 80 Vdc (Min.) BD241B, BD242B  
= 100 Vdc (Min.) BD241C, BD242C  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain — Bandwidth Product  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
f
T
= 3.0 MHz (Min) @ I = 500 mAdc  
C
Compact TO–220 AB Package  
MAXIMUM RATINGS  
80, 100 VOLTS  
40 WATTS  
BD241B  
BD242B  
BD241C  
BD242C  
Rating  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
80  
90  
100  
115  
V
CES  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
3.0  
5.0  
Adc  
Adc  
Base Current  
I
B
1.0  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
3.125  
θJC  
40  
30  
20  
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–174  
Motorola Bipolar Power Transistor Device Data  

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